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    IMYH200R075M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 75 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    IMYH200R012M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 12 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    IMYH200R100M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 100 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters,
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    IMYH200R024M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 24 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    1835 kB
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    16
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    IMYH200R050M1H

    CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package The CoolSiC™ 2000 V 50 mΩ SiC MOSFET in TO-247PLUS-4-HCC package has been designed to offer increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The low power losses of CoolSiC™ technology provide increased reliability thanks to the .XT interconnection technology in a 2000 V optimized package, enabling top efficiency in applications such as string inverters, s
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    1822 kB
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    IDWD10G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    IDWD80G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 80 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    IDYH10G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247PLUS-4 HCC package CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247PLUS-4 HCC package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The extended 14 mm creepage and 5.4 mm clearance distances of the new TO-247PLUS-4 HCC package offer extra safety in harsh environments. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly resistant to humidity. The diode is
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    IDWD25G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    1033 kB
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    10
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    IDWD40G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    1021 kB
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    FF1300UXTR23T2M1P

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.3 mΩ module with half-bridge topology, robust .XT interconnection technology for enhanced lifetime with best in class reliability and with pre-applied Thermal Interface Material (TIM).
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    IDWD50G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 50 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    Infineon
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    976 kB
    Stron:
    10
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    FF1000UXTR23T2M1P

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.3 mΩ module with halfbridge topology, robust .XT interconnection technology for enhanced lifetime with best in class reliability and with pre-applied Thermal Interface Material (TIM).
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    Infineon
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    973 kB
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    17
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    FF2000UXTR23T2M1P

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 2 mΩ module with half-bridge topology, robust .XT interconnection technology for enhanced lifetime with best in class reliability and with pre-applied Thermal Interface Material (TIM).
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    966 kB
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    FF1300UXTR23T2M1

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.3 mΩ module with half-bridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability. Also available with pre-applied Thermal Interface Material (TIM).
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    950 kB
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    FF1000UXTR23T2M1

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.0 mΩ module with half-bridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability. Also available with pre-applied Thermal Interface Material (TIM).
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    FF2000UXTR23T2M1

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 2 mΩ module with half-bridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability. Also available with pre-applied Thermal Interface Material (TIM).
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    FF1800XTR17T2P5P

    1700 V, 1800 A dual IGBT module XHP™ 2 1700 V, 1800 A dual IGBT module with .XT interconnection technology, TRENCHSTOP™ IGBT5 and Thermal Interface Material for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications.
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    FF1800XTR17T2P5

    1700 V, 1800 A dual IGBT module XHP™ 2 1700 V, 1800 A dual IGBT module with .XT interconnection technology and TRENCHSTOP™ IGBT5 for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications. Also available with preapplied Thermal Interface Material (TIM).
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    822 kB
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    FF1000UXTR23T2M1-B5

    CoolSiC™ MOSFET halfbridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2.3 kV, 1.0 mΩ with halfbridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability.
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    FF1200XTR17T2P5P

    1700 V, 1200 A dual IGBT module XHP™ 2 1700 V, 1200 A dual IGBT module with .XT interconnection technology, TRENCHSTOP™ IGBT5 and Thermal Interface Material for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications.
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    721 kB
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    FF1200XTR17T2P5

    1700 V, 1200 A dual IGBT module XHP™ 2 1700 V, 1200 A dual IGBT module with .XT interconnection technology and TRENCHSTOP™ IGBT5 for high reliability and robustness, combined with system availability and long lifetime for high power traction and wind applications. Also available with preapplied Thermal Interface Material (TIM).
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    717 kB
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    FF2000XTR17IE5

    1700 V, 2000 A dual IGBT module 3+ 1700 V, 2000 A dual with .XT interconnection technology, TRENCHSTOP™ IGBT5, Emitter Controlled 5 diode and NTC. Optimized for LSC of wind turbine converters.
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    598 kB
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    FF1700XTR17IE5D

    1700 V, 1700 A dual IGBT module 3+ 1700 V, 1700 A dual with .XT interconnection technology, TRENCHSTOP™ IGBT5, Emitter Controlled 5 diode and NTC. Optimized for MSC of wind turbine converters.
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