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    IAUCN08S7L013

    80V, N-Ch, 1.26 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm² SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN08S7L013 is a true step forward in the area of power density.
    Producent:
    Infineon
    Rozmiar:
    3083 kB
    Stron:
    12
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    IAUCN08S7L024

    80V, N-Ch, 2.4 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm² SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3067 kB
    Stron:
    12
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    IAUCN08S7L033

    80V, N-Ch, 3.3 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm² SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3023 kB
    Stron:
    12
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    IAUCN08S7L018

    80V, N-Ch, 1.8 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm² SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    3017 kB
    Stron:
    12
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    IAUCN08S7L110

    80 V, N-Ch, 11 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET utilizing its next, leading edge, power technology; OptiMOS™ 7 80 V. This product is offered in our versatile, robust, high current SSO8 5x6 mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    2967 kB
    Stron:
    12
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    IAUCN08S7N034

    80 V, N-Ch, 3.4 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    2947 kB
    Stron:
    12
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    IAUCN08S7N019

    80 V, N-Ch, 1.9 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    2947 kB
    Stron:
    12
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    IAUCN08S7N024

    80 V, N-Ch, 2.4 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces another MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications.
    Producent:
    Infineon
    Rozmiar:
    2914 kB
    Stron:
    12
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    IAUCN10S7N021

    100 V, N-Ch, 2.1 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 100V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN10S7N021 is a true step forward in the category of power density.
    Producent:
    Infineon
    Rozmiar:
    2429 kB
    Stron:
    12
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    IMCQ120R053M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 53 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1334 kB
    Stron:
    18
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    IMCQ120R034M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 34 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1331 kB
    Stron:
    18
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    IMCQ120R017M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1327 kB
    Stron:
    18
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    IMCQ120R040M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 40 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1317 kB
    Stron:
    18
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    IMCQ120R005M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 5 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1310 kB
    Stron:
    18
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    IMCQ120R004M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 4 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1305 kB
    Stron:
    18
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    IMCQ120R026M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 26 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1301 kB
    Stron:
    18
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    IMCQ120R078M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 78 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1295 kB
    Stron:
    18
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    IMCQ120R010M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 10 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1292 kB
    Stron:
    17
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    IMCQ120R007M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package CoolSiC™ MOSFET discrete 1200 V, 7 mΩ G2 in a top-side cooled Q-DPAK package specifically designed for wide use in industrial application. The Q-DPAK package solution provides customers with an outstanding thermal performance, easier assembly and reduced system cost. The top-side cooled Q-DPAK single switch is introducing a new era in cooling, energy efficiency, design flexibility and performance.
    Producent:
    Infineon
    Rozmiar:
    1243 kB
    Stron:
    17
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    TLE49SRS8

    XENSIV™ - TLE49SRS8 magnetic angle sensor with outstanding stray field robustness provides high accuracy with flexibly package and interface options The electrification of cars with internal combustion engines and the introduction of electric main drives for electric vehicles continuously increase the potential of electro-magnetic interference by a so-called stray field which can cause issues for electronic sub systems. Differential Hall cells enable a stray field robust measurement of a magnetic field. Si
    Producent:
    Infineon
    Rozmiar:
    1201 kB
    Stron:
    40
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    TLE49SRI3

    XENSIV™ - TLE49SRI/C/S/R3 high-accuracy magnetic angle sensor with stray field robustness and flexible package/interface options Electrification of cars with internal combustion engines and introduction of electric main drives increase electro-magnetic interference potential, causing issues for electronic sub systems. Differential Hall cells enable stray field robust magnetic field measurement. Signal conditioning and digital signal processing units ensure best performance and accuracy in harsh environment
    Producent:
    Infineon
    Rozmiar:
    1141 kB
    Stron:
    50
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    CY8C4146LWE-HVS115X

    PSOC™ 4 HV Mixed Signal (MS) : One-chip solution integrating MCU, multi-sense converter, LIN PHY & LDO Infineon introduces the PSOC™ 4 HV MS series of products, providing a one-chip solution for smart edge-sensor designs for automotive, integrating programmable analog, multi-sense converter, high-voltage (12V) operation, and an ARM Cortex CPU.
    Producent:
    Infineon
    Rozmiar:
    1111 kB
    Stron:
    81
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    TLE49SRP3

    XENSIV™ - TLE49SRI/C/S/R3 high-accuracy magnetic angle sensor with stray field robustness and flexible package/interface options Electrification of cars with internal combustion engines and introduction of electric main drives increase electro-magnetic interference potential, causing issues for electronic sub systems. Differential Hall cells enable stray field robust magnetic field measurement. Signal conditioning and digital signal processing units ensure best performance and accuracy in harsh environment
    Producent:
    Infineon
    Rozmiar:
    1033 kB
    Stron:
    42
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    BTH50060-1LUA

    RDS (on) @ Tj = 25°C: 6 mΩ | Nominal Load Current per channel: 17.7 A | IL (Short Circuit Current): 40 A | ISO 26262-ready Introducing the new member of the Power PROFET™ + 24/48 V family, the BTH50060-1LUA is a 6.0 mΩ single channel smart high-side power switch, embedded in a 8 pin TO-leadless package, providing protective functions and diagnosis. It is especially designed to drive high current loads up to 17.7 A in a 24 V or 48 V power net, for applications like heaters, glow plugs, fans and pumps in the
    Producent:
    Infineon
    Rozmiar:
    903 kB
    Stron:
    40
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    IAUCN08S7N013

    80 V, N-Ch, 1.3 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7 Infineon introduces its first MOSFET in our next, leading edge, power technology; OptiMOS™ 7 80V. This debut product is offered in our versatile, robust, high current SSO8 5x6mm2 SMD package. It is designed specifically for high performance, high quality and the robustness needed for demanding automotive applications. IAUCN08S7N013 is a true step forward in the area of power density.
    Producent:
    Infineon
    Rozmiar:
    704 kB
    Stron:
    12