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    IPD130N10NF2S

    StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 13.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD130N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
    Producent:
    Infineon
    Rozmiar:
    1044 kB
    Stron:
    11