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    IQD009N06NM5

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQD009N06NM5 comes in a PQFN 5x6 Source-Down package. The part offers a very low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, battery-powered applications, battery management, and low-voltage drives.
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    Infineon
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    1224 kB
    Stron:
    11
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    IQD009N06NM5CG

    OptiMOS™ power MOSFETs 60 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) . The power MOSFET IQD009N06NM5CG 60 V normal-level comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(on) of 0.9 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .
    Producent:
    Infineon
    Rozmiar:
    1108 kB
    Stron:
    11
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    IQD009N06NM5SC

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQD009N06NM5SC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12
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    IQD009N06NM5CGSC

    OptiMOS™ power MOSFETs 60 V normal-level in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQD009N06NM5CGSC comes with a low RDS(on) of 0,9 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12