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    IQD016N08NM5CG

    OptiMOS™ power MOSFETs 80 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQD016N08NM5CG 80 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(on) of 1.6 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , battery-powered applications, battery management , and low-voltage drives .
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    IQD016N08NM5CGSC

    OptiMOS™ power MOSFETs 80 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQD016N08NM5CGSC comes with a low RDS(on) of 1,57 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12