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    IQDH29NE2LM5CG

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 mm 2 Source-Down package with industry leading RDS(on) . The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(on) of 0.29 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , telecom power, and intermediate bus conversion in high-performance computing, like hyper-
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    1110 kB
    Stron:
    11
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    IQDH29NE2LM5CGSC

    OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH29NE2LM5CGSC comes with industry’s lowest RDS(on) of 0,29 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a
    Producent:
    Infineon
    Rozmiar:
    1000 kB
    Stron:
    12