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    IQDH35N03LM5

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down package with industry-leading RDS(on). The power MOSFET IQDH35N03LM5 comes in a PQFN 5x6 Source-Down package. It's industry's lowest RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS, telecom power, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-serve
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    IQDH35N03LM5CG

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 mm2 Source-Down package with industry leading RDS(on) . The power MOSFET IQDH35N03LM5CG 30 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers the industry’s lowest RDS(on) of 0.35 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like SMPS , telecom power, and intermediate bus conversion in high-performance computing, like hyper-s
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    Infineon
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    1121 kB
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    11
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    IQDH35N03LM5SC

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on). The power MOSFET IQDH35N03LM5SC comes with a low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
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    Infineon
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    1000 kB
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    12
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    IQDH35N03LM5CGSC

    OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on) The power MOSFET IQDH35N03LM5CGSC comes with a low RDS(on) of 0,35 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variet
    Producent:
    Infineon
    Rozmiar:
    999 kB
    Stron:
    12