elecena.pl

  1. Podgląd PDFa
    Do dokumentacji »

    IQDH45N04LM6CG

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 mm2 Source-Down package with very low RDS(on) The power MOSFET IQDH45N04LM6CG 40 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers a very low RDS(ON) of 0.45 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications like battery-powered tools , SMPS , telecom power, and intermediate bus conversion in high-performance computing, like hype
    Producent:
    Infineon
    Rozmiar:
    1137 kB
    Stron:
    11
  2. Podgląd PDFa
    Do dokumentacji »

    IQDH45N04LM6CGSC

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on) The power MOSFET IQDH45N04LM6CGSC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. The Center-Gate footprint is optimized for parallelization. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end
    Producent:
    Infineon
    Rozmiar:
    1003 kB
    Stron:
    12