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    IQDH45N04LM6SC

    OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on). The power MOSFET IQDH45N04LM6SC comes with a low RDS(on) of 0,45 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the overmolded package. This enables higher system efficiency and power density for a large variety of end applications.
    Producent:
    Infineon
    Rozmiar:
    1007 kB
    Stron:
    13