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    IQE022N06LM5SC

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down DSC package IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density
    Producent:
    Infineon
    Rozmiar:
    1397 kB
    Stron:
    11
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    IQE022N06LM5CGSC

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package IQE022N06LM5CGSC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in a PQFN 3.3x3.3 Source-Down Center-Gate (CG) dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C , superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages,
    Producent:
    Infineon
    Rozmiar:
    1318 kB
    Stron:
    11
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    Do dokumentacji »

    IQE022N06LM5CG

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate package IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability
    Producent:
    Infineon
    Rozmiar:
    1154 kB
    Stron:
    11
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    Do dokumentacji »

    IQE022N06LM5

    OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package IQE022N06LM5 is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. C
    Producent:
    Infineon
    Rozmiar:
    1119 kB
    Stron:
    11