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    IQE065N10NM5SC

    OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or i
    Producent:
    Infineon
    Rozmiar:
    1597 kB
    Stron:
    13