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    IQE220N15NM5SC

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down DSC package The IQE220N15NM5SC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized fo
    Producent:
    Infineon
    Rozmiar:
    1384 kB
    Stron:
    11
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    IQE220N15NM5CGSC

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate DSC package The IQE220N15NM5CGSC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities. The dual-side cooling package dissipates three times more power than to the overmolded package. The new technology can be found in two different footprints Standard-Gate and Center-Gate
    Producent:
    Infineon
    Rozmiar:
    1304 kB
    Stron:
    11
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    IQE220N15NM5CG

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down Center-Gate package The IQE220N15NM5CG is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. It offers increased thermal capability and improved power density and layout possibilities. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
    Producent:
    Infineon
    Rozmiar:
    1097 kB
    Stron:
    11
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    IQE220N15NM5

    OptiMOS™ 5 low-voltage power MOSFET 150 V in PQFN 3.3x3.3 Source-Down package The IQE220N15NM5 is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, which is positioned upside down inside of the components. It offers increased thermal capability and improved power density and layout possibilities. The new technology can be found in two different footprints Standard-Gate and Center-Gate (optimized for parallelization).
    Producent:
    Infineon
    Rozmiar:
    1064 kB
    Stron:
    11