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    IRHNA57160D

    This N-channel MOSFET is a radiation-hardened device in a SMD-2 package, rated at 100V and 69A. JANSG2N7469U2 offers electrical performance up to 300krad(Si) TID and QPL classification, with low RDS(on) and gate charge for reduced power losses in switching applications. This R5 device also offers voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    731 kB
    Stron:
    13