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    IRHNA6S7160SCSD

    This R6 rad hard N-channel MOSFET comes in a SMD-2 package and on DBC carrier. With 100V and 56A capacity, it offers electrical performance up to 100krad(Si) TID. Ideal for space applications, IRHNA6S7160SCSD has low RDS(on) and gate charge, reducing power losses in switching applications such as DC-DC converters and motor controllers. Voltage control, fast switching, and temperature stability make this MOSFET ideal for any high-performance application.
    Producent:
    Infineon
    Rozmiar:
    617 kB
    Stron:
    9