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    IRHNA6S7264SCS

    IRHNA6S7264SCS R6 SMD-2 N-channel MOSFET is a rad hard, 250V, 31.5A QIRL device with up to 100krad(Si) TID and LET of 90 MeV·cm2/mg. Its low RDS(on) and gate charge minimize power losses in DC-DC converters and motor controllers while maintaining MOSFET advantages like voltage control, fast switching and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    448 kB
    Stron:
    9