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    IRHNJ67134SCS

    The rad hard N-channel MOSFET JANSR2N7589U3 in SMD-0.5 package delivers superior power and reduced power loss. Supporting up to 100krad (Si) Total Ionizing Dose, this R6 device is ideal for space applications. With 150V and 19A capacity, it is designed for high-speed switching in DC-DC converters and motor controllers. Its very low RDS(on) and faster switching times increase power density in space power systems.
    Producent:
    Infineon
    Rozmiar:
    1334 kB
    Stron:
    14