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    ISC018N08NM6

    OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio offering. Compared to the latest OptiMOS™ 5 technology, Infineon's leading thin wafer technology enables significant performance improvement, including >24% lower RDS(on) and ~40% improved FOMQg x RDS(on) and FOMQgd x RDS(on) in SuperSO8 The performance improvement enables easier thermal design and less paralleling, leading to higher
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    Infineon
    Rozmiar:
    1351 kB
    Stron:
    11
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    ISC018N08NM6SC

    OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!
    Producent:
    Infineon
    Rozmiar:
    1098 kB
    Stron:
    15