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    JANSF2N7479U3

    Rad hard N-channel MOSFET IRHNJ57Z30A is a single device with a maximum voltage of 100V and current of 22A, designed for space applications. Its low RDS(on) and gate charge reduce power losses in DC-DC converters and motor control applications. With electrical performance up to 100krad(Si) TID, this R5 MOSFET is ideal for harsh radiation environments. Comes in a compact SMD-0.5 package.
    Producent:
    Infineon
    Rozmiar:
    923 kB
    Stron:
    13