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RZ/N1D

Microprocessors Featuring 5 Ethernet Ports and Latest Redundancy Protocol for Industrial Network Master Devices

Producent:
Renesas Electronics

Rozmiar:
1933 kB

Stron:
26
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IPP014N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in TO-220 OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1668 kB

Stron:
11
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ISC008N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1547 kB

Stron:
14
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ISC025N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1491 kB

Stron:
13
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IQE036N08NM6SC

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1381 kB

Stron:
11
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IQE036N08NM6CGSC

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Center Gate Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1301 kB

Stron:
11
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ISC060N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1270 kB

Stron:
15
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ISC024N08NM7

OptiMOS™ 7 n-channel power MOSFET 80 V in SSO8 package OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.

Producent:
Infineon

Rozmiar:
1269 kB

Stron:
15
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ISC034N08NM7

OptiMOS™ 7 n-channel power MOSFET 80 V in SSO8 package OptiMOS™ 7 80 V is the latest technology setting a new industry standard for a perfect balance of power efficiency and performance with cost efficiency.

Producent:
Infineon

Rozmiar:
1269 kB

Stron:
15
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ISZ025N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1268 kB

Stron:
13
Do dokumentacji »
ISZ072N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1267 kB

Stron:
13
Do dokumentacji »
ISZ023N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1261 kB

Stron:
11
Do dokumentacji »
IQE018N06NM6SC

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1256 kB

Stron:
15
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ICE501MD

Driving up to 1700 V CoolSiC™ ICE501MD is the latest CoolSET™ PWM fixed-frequency 5th generation flyback controller optimized for off-line switch mode power supply (SMPS) supporting up to 73 W output power (85 Vac - 440 Vac). It is available in DSO-8 package and offers different gate voltages for driving both CoolSiC™ MOSFET and Si MOSFET. ICE501MD offers a wide supply voltage range up to 32 V and low standby power consumption.

Producent:
Infineon

Rozmiar:
1223 kB

Stron:
31
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ISC009N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1223 kB

Stron:
15
Do dokumentacji »
IQE018N06NM6CGSC

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on) in SuperSO8. These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1131 kB

Stron:
15
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IQE036N08NM6CG

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Center Gate OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1127 kB

Stron:
11
Do dokumentacji »
IQE018N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1104 kB

Stron:
15
Do dokumentacji »
ISC007N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1096 kB

Stron:
15
Do dokumentacji »
ISC007N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1094 kB

Stron:
15
Do dokumentacji »
IPF011N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in D²PAK 7-pin OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1093 kB

Stron:
11
Do dokumentacji »
IQE036N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1093 kB

Stron:
11
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IPT009N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in TOLL OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1042 kB

Stron:
11
Do dokumentacji »
IQE018N06NM6CG

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
921 kB

Stron:
12
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STEVAL-ISA149V1

19 V - 75 W SMPS compliant with latest Energy Star criteria using the L6563 and the L6566A

Producent:
STMicroelectronics

Rozmiar:
244 kB

Stron:
4