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    AIMBG75R007M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 7 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
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    Infineon
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    1614 kB
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    18
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    AIMBG75R025M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 25 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1609 kB
    Stron:
    18
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    ISC300N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC300N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a wide range of applications: from static swiching to high frequency in hard and soft switching applications.
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    Infineon
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    1443 kB
    Stron:
    14
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    IMBG75R007M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1422 kB
    Stron:
    18
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    IMBG75R025M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1418 kB
    Stron:
    18
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    AIMBG75R060M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 60 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1388 kB
    Stron:
    18
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    AIMBG75R033M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 33 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1384 kB
    Stron:
    18
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    AIMBG75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 50 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1383 kB
    Stron:
    18
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    AIMBG75R040M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in D2PAK-7 package, 40 mΩ The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop design and less system and assembly cost.
    Producent:
    Infineon
    Rozmiar:
    1381 kB
    Stron:
    18
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    IPTC068N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TOLT package IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. OptiMOS™ 6 200 V was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Highest power density can be achieved with the combination of the TOLT package and the OptiMOS™ 6 technology.
    Producent:
    Infineon
    Rozmiar:
    1246 kB
    Stron:
    15
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    TLI55910-A6E-E0001

    XENSIV™ - TLI55910-A6E-E0001 high-sensitivity and low-power linear TMR position sensor for precise measurements The TLI55910 is a high-sensitivity and low-power linear position sensor that leverages tunnel magnetoresistance (TMR) technology to deliver precise linear measurements. This non-amplified analog sensor can measure magnetic fields with in a range of ±35 mT and boasts a large ratiometric output sensitivity of 5 mV/V/mT. This device is a versatile solution for various measurements such as displaceme
    Producent:
    Infineon
    Rozmiar:
    1241 kB
    Stron:
    14
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    IMBG75R060M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1196 kB
    Stron:
    18
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    IMBG75R033M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    18
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    IMBG75R050M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    18
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    IMBG75R040M2H

    The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. The CoolSiC™ MOSFET 750 V leverages more than 20 years of SiC experience in Infineon. It offers an edge in performance, reliability and robustness, with gate driving flexibility, enabling the simplified and cost effective system design for top efficiency and power density. The innovative top-side-cooling package further enhance the CoolSiC™ 750 V strengths offering more density, optimized power loop des
    Producent:
    Infineon
    Rozmiar:
    1190 kB
    Stron:
    18
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    IMBG65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1172 kB
    Stron:
    17
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    IMW65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-3 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1100 kB
    Stron:
    17
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    IPF048N15NM6

    OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 7-pin package IPF048N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
    Producent:
    Infineon
    Rozmiar:
    1009 kB
    Stron:
    12
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    981 kB
    Stron:
    17
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    IPP095N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package IPP095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    895 kB
    Stron:
    12
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    IPP175N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package IPP175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFETTM products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a variety of applications: from static swiching to high frequency in hard and soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    894 kB
    Stron:
    12
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    IPP130N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package IPP130N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    893 kB
    Stron:
    12
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    IPB175N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFET™ products.
    Producent:
    Infineon
    Rozmiar:
    727 kB
    Stron:
    13
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    IPB095N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in D²PAK 3-pin package IPB095N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    725 kB
    Stron:
    12
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    IPB051N15NM6

    OptiMOS™ 6 power MOSFET 150 V normal level in D²PAK 3-pin package IPB051N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ 5 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching.
    Producent:
    Infineon
    Rozmiar:
    721 kB
    Stron:
    11