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    TCI

    XENSIV™ TCI H2 gas sensor – a hydrogen sensor based on the thermal conductivity principle The XENSIV™ TCI H2 gas sensor reliably detects hydrogen (H2) in demanding automotive and industrial applications like FCEVs, hydrogen combustion engines, refueling stations, BEVs, ESS, electrolyzers, and stationary fuel cells. It operates on the thermal conductivity (TC) principle, using a differential MEMS design to measure heat transfer through gas. Unlike chemical-based sensors (e.g., MOX, CC), it is resistant to p
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    Infineon
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    2916 kB
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    IMT65R010M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 10 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1361 kB
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    18
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    IMT65R026M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 26 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1359 kB
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    18
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    IMT65R015M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 15 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1359 kB
    Stron:
    18
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    IMT65R020M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 20 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1358 kB
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    18
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    IMT65R033M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 33 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    1357 kB
    Stron:
    18
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    IMT65R040M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 40 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1355 kB
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    18
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    IMT65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 50 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1352 kB
    Stron:
    18
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    IMDQ75R007M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 7 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
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    Infineon
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    1251 kB
    Stron:
    20
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    IMDQ75R004M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 4 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 4 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
    Producent:
    Infineon
    Rozmiar:
    1219 kB
    Stron:
    19
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    IMBG65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1172 kB
    Stron:
    17
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    IMW65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-3 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1100 kB
    Stron:
    17
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    CYEL18V2562-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
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    Infineon
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    1054 kB
    Stron:
    56
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    981 kB
    Stron:
    17
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    CYEL18V5122-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
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    974 kB
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    BTH50060-1LUA

    RDS (on) @ Tj = 25°C: 6 mΩ | Nominal Load Current per channel: 17.7 A | IL (Short Circuit Current): 40 A | ISO 26262-ready Introducing the new member of the Power PROFET™ + 24/48 V family, the BTH50060-1LUA is a 6.0 mΩ single channel smart high-side power switch, embedded in a 8 pin TO-leadless package, providing protective functions and diagnosis. It is especially designed to drive high current loads up to 17.7 A in a 24 V or 48 V power net, for applications like heaters, glow plugs, fans and pumps in the
    Producent:
    Infineon
    Rozmiar:
    903 kB
    Stron:
    40
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    CYEL18V2563-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    841 kB
    Stron:
    51
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    CYEL18V5123-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th
    Producent:
    Infineon
    Rozmiar:
    780 kB
    Stron:
    50
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    D8751H

    8BIT EPROM,KERAMIK INTEL cerdip40 Układ oryginalny produkcji Intel, rzeczywiste zdjęcie do wyczerpania magazynu ( Real photo) Oryginal Intel Production D8751H L3381511 Intel Factory New, old production, never used view like on ouf photo 10 pcs @ 7 USD each pcs 150 pcs @ 4 USD each pcs Ex stock at this moment
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    Meditronik
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    763 kB
    Stron:
    21
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    CYPD7193-39BFXST

    Optimized USB-C PD solution for multi-port head unit chargers in automotive applications EZ-PD™ CCG7SAF is a highly integrated USB Type-C Power Delivery solution for automotive applications, featuring a buck-boost controller, 2 FETs, and a 32-bit Arm® Cortex®-M0 processor enabling custom system management functions like power throttling and temperature monitoring.
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    Infineon
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    492 kB
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    64
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    940355

    Blickle 940355 LIK-POH 125HK-1 Kółko skrętne Średnica koła: 125 mm Maksymalne obciążenie: 350 kg 1 szt.
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    Blickle
    Rozmiar:
    128 kB
    Stron:
    2
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    BTS80009-SWPI-1ES

    12 V | 0.9 mΩ | 34.5 A | I²t wire protection | SPI | 1ch smart HS switch | ISO 26262-compliant | PG-TSDSO-24 | SPOC™ Wire Guard 12V The BTS80009-SWPI-1ES is a single-channel high-side power switch and member of the SPOC™ Wire Guard family. The device is providing protection functions like configurable I²t wire protection and overcurrent limitation. It also features Idle Mode, digital diagnosis and Capacitive load switching mode.
    Producent:
    Infineon
    Rozmiar:
    112 kB
    Stron:
    1
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    BTS80009-SWPP-1ES

    12 V | 0.9 mΩ | 34.5 A | I²t wire protection | SPI | 1ch smart HS switch | ISO 26262-compliant | PG-TSDSO-24 | SPOC™ Wire Guard 12V The BTS80009-SWPP-1ES is a single-channel high-side power switch and member of the SPOC™ Wire Guard family. The device is providing protection functions like configurable I²t wire protection and overcurrent limitation. It also features Idle Mode, enhanced digital diagnosis (incl. pre-warning) and Capacitive load switching mode.
    Producent:
    Infineon
    Rozmiar:
    112 kB
    Stron:
    1
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    BTS80009-SWPA-1ES

    12 V | 0.9 mΩ | 34.5 A | I²t wire protection | SPI configurable | 1ch smart HS switch | ISO 26262-compliant | PG-TSDSO-24 | SPOC™ Wire Guard 12V The BTS80009-SWPA-1ES is a single-channel high-side power switch and member of the SPOC™ Wire Guard family. The device is providing protection functions like configurable I²t wire protection and overcurrent limitation. It also features digital diagnosis and Capacitive load switching mode
    Producent:
    Infineon
    Rozmiar:
    112 kB
    Stron:
    1