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    AIMDQ75R025M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    AIMDQ75R020M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 20 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    20
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    AIMDQ75R016M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    1442 kB
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    20
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    AIMDQ75R060M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    1405 kB
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    20
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    AIMDQ75R033M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 33 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    1400 kB
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    20
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    AIMDQ75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 50 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    1399 kB
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    20
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    IMBG65R026M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 26 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1398 kB
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    IMBG65R033M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package The CoolSiC™ MOSFET 650 V, 33 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1396 kB
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    17
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    AIMDQ75R040M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 40 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
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    Infineon
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    1396 kB
    Stron:
    20
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    IMBG65R060M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 60 mΩ The CoolSiC™ MOSFET 650 V, 60 mΩ G2 in a D2PAK-7 (TO-263-7) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1395 kB
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    17
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    IMBG120R034M2H

    CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package The 1200 V, 34 mΩ G2 in a TO-263-7 (D2PAK-7L) package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.
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    Infineon
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    1260 kB
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    17
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    IMDQ75R025M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 25 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1252 kB
    Stron:
    20
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    IMDQ75R016M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 16 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1252 kB
    Stron:
    20
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    IMDQ75R007M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 7 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 7 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
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    Infineon
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    1251 kB
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    20
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    IMDQ75R004M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 4 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications. The ultra-low RDS(on) value of 4 mΩ makes it ideal for static switching applications like eFuse and solid-state circuit breakers
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    Infineon
    Rozmiar:
    1219 kB
    Stron:
    19
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    IMDQ75R060M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 60 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1214 kB
    Stron:
    20
  17. Podgląd PDFa
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    IMDQ75R033M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 33 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1209 kB
    Stron:
    20
  18. Podgląd PDFa
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    IMDQ75R050M2H

    CoolSiC™ Automotive MOSFET 750 V G2 in Q-DPAK top-side cooled package, 50 mΩ The CoolSiC™ Automotive MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for automotive applications.
    Producent:
    Infineon
    Rozmiar:
    1209 kB
    Stron:
    20
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    IMDQ75R040M2H

    CoolSiC™ MOSFET 750 V G2 in Q-DPAK top-side cooled package, 40 mΩ The CoolSiC™ MOSFET 750 V Generation 2 offers improved switching performance, reduced losses, and enhanced thermal management. With a 25% increase in switching speed and up to 35% improved Figure-of-Merits compared to Generation 1, it enables more efficient, compact, and reliable systems for industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1205 kB
    Stron:
    20
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    TSV991A

    Rail to rail input/output high merit factor op-amps
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    STMicroelectronics
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    983 kB
    Stron:
    25
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    TSV521

    High merit factor (1.15 MHz for 45 uA) CMOS op-amps
    Producent:
    STMicroelectronics
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    974 kB
    Stron:
    27
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    TSV521

    High merit factor (1.15 MHz for 45 uA) CMOS op-amps
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    STMicroelectronics
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    744 kB
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    1
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    SMT-SOP-Sockets-Datasheet

    Podstawka testowa TSOP56 (SMD) eZIF Meritec R=0,5mm
    Producent:
    Meritec
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    208 kB
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    4