elecena.pl

  1. Podgląd PDFa
    Do dokumentacji »

    IMWH170R450M1

    CoolSiC™ MOSFET discrete 1700 V, 450 mΩ G1 in TO247-3-HCC package The CoolSiC™ MOSFET 1700 V, 450 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller, no need for a Gate driver IC, .XT interconnect technology for excellent thermal performance, and a high creepage clearance package for increased reliability.
    Producent:
    Infineon
    Rozmiar:
    1695 kB
    Stron:
    15
  2. Podgląd PDFa
    Do dokumentacji »

    IMWH170R1K0M1

    CoolSiC™ MOSFET discrete 1700 V, 1000 mΩ G1 in TO247-3-HCC package The CoolSiC™ MOSFET 1700 V, 1000 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller, no need for a Gate driver IC, .XT interconnect technology for excellent thermal performance, and a high creepage clearance package for increased reliability.
    Producent:
    Infineon
    Rozmiar:
    1647 kB
    Stron:
    15
  3. Podgląd PDFa
    Do dokumentacji »

    IMWH170R650M1

    CoolSiC™ MOSFET discrete 1700 V, 650 mΩ G1 in TO247-3-HCC package The CoolSiC™ MOSFET 1700 V, 650 mΩ in a TO247-3-HCC package suits single-end fly-back auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power conversion applications. Key features include direct drivability by a fly-back controller, no need for a Gate driver IC, .XT interconnect technology for excellent thermal performance, and a high creepage clearance package for increased reliability.
    Producent:
    Infineon
    Rozmiar:
    1591 kB
    Stron:
    15
  4. Podgląd PDFa
    Do dokumentacji »

    IGOT60R042D1

    600 V CoolGaN™ e-mode power transistor for high power applications in top side cooled power package The IGOT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the leaded SMD DSO-20-87 package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables, and numerous other applications.
    Producent:
    Infineon
    Rozmiar:
    631 kB
    Stron:
    16
  5. Podgląd PDFa
    Do dokumentacji »

    TLF35585QUS02

    The wide switching frequency range allows optimization in respect of efficiency and usage of small filter components. A dedicated reference-regulator supplies the ADC independent from microcontroller load steps and acts as tracking-source for the two-independent sensor-supplies. The flexible state machine, wake-up concept including timer, and the stand-by-regulator favors the usage in numerous applications.Multiple safety features enable easy realization of ASIL D together with various Microcontrollers (μCs
    Producent:
    Infineon
    Rozmiar:
    589 kB
    Stron:
    10
  6. Podgląd PDFa
    Do dokumentacji »

    IGO60R042D1

    600 V CoolGaN™ e-mode power transistor for high power applications in bottom side cooled power package The IGO60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled DSO-20-85 package, it is designed for optimal power dissipation required in modern data centers, server , telecom renewables, and numerous other applications.
    Producent:
    Infineon
    Rozmiar:
    567 kB
    Stron:
    16
  7. Podgląd PDFa
    Do dokumentacji »

    IGT60R042D1

    600 V CoolGaN™ e-mode power transistor for high power applications in bottom side cooled power package The IGT60R042D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 package, it is designed optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applications.
    Producent:
    Infineon
    Rozmiar:
    548 kB
    Stron:
    16
  8. Podgląd PDFa
    Do dokumentacji »

    IGT60R190D1

    Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R190D1 for ultimate efficiency and reliability The IGT60R190D1 enables more compact topologies and increased efficiency at higher frequency operation. It is certified through an extensive GaN-specific qualification process, exceeding industry standards. Housed in the bottom-side cooled HSOF-8 (TO-leadless) package, it is designed for optimal power dissipation required in modern data centers, server , telecom , renewables and numerous other applicat
    Producent:
    Infineon
    Rozmiar:
    543 kB
    Stron:
    16
  9. Podgląd PDFa
    Do dokumentacji »

    TLF35585QVS02

    The wide switching frequency range allows optimization in respect of efficiency and usage of small filter components. A dedicated reference-regulator supplies the ADC independent from microcontroller load steps and acts as tracking-source for the two-independent sensor-supplies. The flexible state machine, wake-up concept including timer, and the stand-by-regulator favors the usage in numerous applications.Multiple safety features enable easy realization of ASIL D together with various Microcontrollers (μCs
    Producent:
    Infineon
    Rozmiar:
    534 kB
    Stron:
    10
  10. Podgląd PDFa
    Do dokumentacji »

    TLF35585QVS01

    The wide switching frequency range allows optimization in respect of efficiency and usage of small filter components. A dedicated reference-regulator supplies the ADC independent from microcontroller load steps and acts as tracking-source for the two-independent sensor-supplies. The flexible state machine, wake-up concept including timer, and the stand-by-regulator favors the usage in numerous applications.Multiple safety features enable easy realization of ASIL D together with various microcontrollers. The
    Producent:
    Infineon
    Rozmiar:
    534 kB
    Stron:
    10