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    IMDQ65R010M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 10 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
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    IMDQ65R007M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 7 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
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    Infineon
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    IMDQ65R015M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 15 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
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    Infineon
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    IMDQ65R020M2H

    CoolSiC™ MOSFET 650 V G2 in Q-DPAK top-side cooling package, 20 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in Q-DPAK utilizes the G2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
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    Infineon
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    1221 kB
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    IMLT65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 in TOLT utilizes the CoolSiC™ Generation 2 superior switching performance, which also provides the advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ TOLT and CoolMOS™ Q-DPAK, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density.
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    Infineon
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    1197 kB
    Stron:
    19