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    IPTG054N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG054N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
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    Infineon
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    1624 kB
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    IPTG063N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG063N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
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    Infineon
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    1601 kB
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    13
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    IPTG044N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG044N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
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    Infineon
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    1589 kB
    Stron:
    13
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    IPTC012N06NM5

    OptiMOS™ 5 power MOSFET 60 V in TOLT for excellent thermal performance IPTC012N06NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS™ 5 technology allows best-in-class products in 60 V as well as high current rating >300 A for high-power density designs. With top-side cooling setup, the drain is exposed at the surface of the package enabling 95 percent of the
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    Infineon
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    1406 kB
    Stron:
    11
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    IPTC007N06NM5

    OptiMOS™ 5 power MOSFET 60 V in TOLT for excellent thermal performance IPTC007N06NM5 is part of the OptiMOS™ 5 power MOSFET in TOLT family: the TO-Leaded top-side cooling package for superior thermal performance. This innovative package combined with the key features of OptiMOS™ 5 technology allows best-in-class products in 60 V as well as high current rating >400 A for high-power density designs. With top-side cooling setup, the drain is exposed at the surface of the package enabling 95 percent of the
    Producent:
    Infineon
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    1385 kB
    Stron:
    11
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    IPTG039N15NM5

    OptiMOS™ 5 power MOSFET 150 V in TOLG package for higher thermal cycling on board performance The OptiMOS™ 5 power MOSFET 150 V IPTG039N15NM5 comes in the improved TO-Leaded package with gullwing leads. With a compatible footprint to TO-Leadless, TOLG allows excellent electrical performance compared to D2PAK 7-pin with ~60 percent board space reduction, offers very low RDS(on) and is optimized to handle high current.
    Producent:
    Infineon
    Rozmiar:
    1240 kB
    Stron:
    13
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    IPT039N15N5

    OptiMOS™ 5 power MOSFET 150 V 3.9 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
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    Infineon
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    1156 kB
    Stron:
    13
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    IPD040N08NF2S

    StrongIRFET™ 2 single N-channel power MOSFET 80 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 4.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD040N08NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
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    Infineon
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    1058 kB
    Stron:
    11
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    IPD052N10NF2S

    StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 5.2 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD052N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
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    Infineon
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    1056 kB
    Stron:
    11
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    IPD055N08NF2S

    StrongIRFET™ 2 single N-channel power MOSFET 80 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 80 V features low RDS(on) of 5.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD055N08NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
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    Infineon
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    1048 kB
    Stron:
    11
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    IPD130N10NF2S

    StrongIRFET™ 2 single N-channel power MOSFET 100 V in DPAK Infineon's StrongIRFET™ 2 power MOSFET 100 V features low RDS(on) of 13.0 mOhm, addressing a broad range of applications from low- to high-switching frequency. Compared to the previous technology the IPD130N10NF2S achieves 40 percent lower RDS(on) and over 50 percent Qg improvement.
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    Infineon
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    1044 kB
    Stron:
    11
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    IPT054N15N5

    OptiMOS™ 5 power MOSFET 150 V 5.4 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
    Producent:
    Infineon
    Rozmiar:
    1023 kB
    Stron:
    11
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    IPT044N15N5

    OptiMOS™ 5 power MOSFET 150 V 4.4 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
    Producent:
    Infineon
    Rozmiar:
    1001 kB
    Stron:
    11
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    IPT063N15N5

    OptiMOS™ 5 power MOSFET 150 V 6.3 mOhm in TOLL Infineon’s OptiMOS™ power MOSFET in TO-Leadless package is optimized for high-current applications, such as forklifts, light electric vehicles (LEV) , power tools , point-of-loads (POL), telecom and e-fuses. Furthermore, the 60 percent smaller package size enables a very compact design. Compared to D²PAK 7-pin, TO-Leadless shows a substantial reduction in footprint of 30 percent. The 50 percent reduced height offers a significant advantage in narrow applicatio
    Producent:
    Infineon
    Rozmiar:
    994 kB
    Stron:
    11