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    IMT65R010M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 10 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    1361 kB
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    18
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    IMT65R060M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 60 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1361 kB
    Stron:
    19
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    IMT65R026M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 26 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1359 kB
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    18
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    IMT65R015M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 15 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1359 kB
    Stron:
    18
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    IMT65R020M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 20 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    1358 kB
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    18
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    IMT65R033M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 33 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    1357 kB
    Stron:
    18
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    IMT65R040M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 40 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1355 kB
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    18
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    IMT65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 50 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1352 kB
    Stron:
    18
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    IMYR140R011M2H

    CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 11 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.
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    Infineon
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    1234 kB
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    IMYR140R019M2H

    CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 19 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.
    Producent:
    Infineon
    Rozmiar:
    1233 kB
    Stron:
    18
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    IMYR140R008M2H

    CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 8 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.
    Producent:
    Infineon
    Rozmiar:
    1230 kB
    Stron:
    18
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    IMYR140R006M2H

    CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 6 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.
    Producent:
    Infineon
    Rozmiar:
    1229 kB
    Stron:
    18
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    IMYR140R024M2H

    CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 24 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.
    Producent:
    Infineon
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    1219 kB
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    18
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    IMYR140R029M2H

    CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.
    Producent:
    Infineon
    Rozmiar:
    1213 kB
    Stron:
    18
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    IMLT65R060M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 60 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1192 kB
    Stron:
    19
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    IMLT65R040M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    19
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    IMLT65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 50 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1189 kB
    Stron:
    19
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    IMBG65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1172 kB
    Stron:
    17
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    IMW65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-3 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1100 kB
    Stron:
    17
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    981 kB
    Stron:
    17
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    IMTA65R020M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    935 kB
    Stron:
    17
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    IMTA65R060M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package, 60 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    931 kB
    Stron:
    17
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    IMTA65R040M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    930 kB
    Stron:
    17
  24. Podgląd PDFa
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    IMTA65R050M2H

    CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package, 50 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in Thin-TOLL 8x8 is the best 8x8 option to leverage a performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the standard 8x8 and it boasts the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    929 kB
    Stron:
    17
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    SH40JHK-YQ-2S0R2G-12018

    Joystick na bazie potencjometrów typ hall effect; wersja 2 osiowa Joystick na bazie potencjometrów typu hall effect Napięcie wyjściowe 0.5-4,5 V 10-90% przy zasilaniu Vcc = 5V DC Średnica otworu montażowego 42mm; średnica 42/49mm gł.38mm+ rękojeść z mieszkiem 72 mm 3 kierunkowy X i Y +-17,5-22,5 st ; Z +- 27,5 st Joystick based on hall effect potentiometers; Output voltage 0,5V-4,5V = output 10-90% at power supply 5V DC Its possible to deliver special version 0-5V output 0-100% on special order ( SH40JHK-
    Producent:
    Meditronik
    Rozmiar:
    863 kB
    Stron:
    2