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    IQE030N06NM5SC

    OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 60 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1625 kB
    Stron:
    13
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    IQE050N08NM5SC

    OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 80 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1603 kB
    Stron:
    13
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    IQE013N04LM6SC

    OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 40 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1599 kB
    Stron:
    13
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    IQE065N10NM5SC

    OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or i
    Producent:
    Infineon
    Rozmiar:
    1597 kB
    Stron:
    13
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    IQE006NE2LM5SC

    OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 25 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or imp
    Producent:
    Infineon
    Rozmiar:
    1589 kB
    Stron:
    13
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    IQE030N06NM5CGSC

    OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 60 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1567 kB
    Stron:
    13
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    IQE050N08NM5CGSC

    OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 80 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1542 kB
    Stron:
    13
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    IQE065N10NM5CGSC

    OptiMOS™ low-voltage power MOSFET 100 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 100 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or i
    Producent:
    Infineon
    Rozmiar:
    1540 kB
    Stron:
    13
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    IQE013N04LM6CGSC

    OptiMOS™ low-voltage power MOSFET 40 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 40 V PQFN 3.3x3.3 Source-Down: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or improve
    Producent:
    Infineon
    Rozmiar:
    1539 kB
    Stron:
    13
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    IQE006NE2LM5CGSC

    OptiMOS™ low-voltage power MOSFET 25 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance OptiMOS™5 25 V PQFN 3.3x3.3 Source-Down DSC: offering a flipped silicon die, which is positioned upside down inside of the components. This adjustment allows the source potential (instead of the drain potential) to be connected to the PCB over the thermal pad. Therefore, it offers several advantages, such as increased thermal capability, advanced power density or imp
    Producent:
    Infineon
    Rozmiar:
    1528 kB
    Stron:
    13
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    TLE49SRS8

    XENSIV™ - TLE49SRS8 magnetic angle sensor with outstanding stray field robustness provides high accuracy with flexibly package and interface options The electrification of cars with internal combustion engines and the introduction of electric main drives for electric vehicles continuously increase the potential of electro-magnetic interference by a so-called stray field which can cause issues for electronic sub systems. Differential Hall cells enable a stray field robust measurement of a magnetic field. Si
    Producent:
    Infineon
    Rozmiar:
    1201 kB
    Stron:
    40
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    TLE49SRI3

    XENSIV™ - TLE49SRI/C/S/R3 high-accuracy magnetic angle sensor with stray field robustness and flexible package/interface options Electrification of cars with internal combustion engines and introduction of electric main drives increase electro-magnetic interference potential, causing issues for electronic sub systems. Differential Hall cells enable stray field robust magnetic field measurement. Signal conditioning and digital signal processing units ensure best performance and accuracy in harsh environment
    Producent:
    Infineon
    Rozmiar:
    1141 kB
    Stron:
    50
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    TLE49SRP3

    XENSIV™ - TLE49SRI/C/S/R3 high-accuracy magnetic angle sensor with stray field robustness and flexible package/interface options Electrification of cars with internal combustion engines and introduction of electric main drives increase electro-magnetic interference potential, causing issues for electronic sub systems. Differential Hall cells enable stray field robust magnetic field measurement. Signal conditioning and digital signal processing units ensure best performance and accuracy in harsh environment
    Producent:
    Infineon
    Rozmiar:
    1033 kB
    Stron:
    42
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    TLE9371VLE

    Infineon’s TLE937x family with up to 8MB/s flexible data rate The CAN Signal Improvement transceivers enhance signal integrity, reduce ringing effects, and enable faster bit rates. They offer highly accurate transmitter, reduced ringing, increased CAN speed, improved EMC performance, and full CAN FD protocol operations. These transceivers facilitate more node connections, entry into complex applications, reduced cable weight and costs, and find potential use in gateway modules and body control modules.
    Producent:
    Infineon
    Rozmiar:
    639 kB
    Stron:
    38
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    TLI5590-A6W

    TLI5590-A6W is a two-channel radiometric gradiometer for high precise length measurement. Qualified for industrial / consumer applications acc. to JEDEC JESD47K standard. It has super high accuracy better than 10 µm achievable by use of proper linear or rotary magnet encoder. The excellent channel matching of less than 5 % over full magnetic input range of ±5 mT. Potential application is lens positioning for zoom and focus adjusting in cameras.
    Producent:
    Infineon
    Rozmiar:
    452 kB
    Stron:
    15