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JANSR2N7581U2A

This rad hard R6 N-channel MOSFET in a SupIR-SMD package has a voltage of 150V and 56A and electrical performance up to 100krad(Si) TID. The low RDS(on) and gate charge reduce power losses, making JANSR2N7581U2A perfect for DC-DC converters and motor controllers in space applications. MOSFET advantages such as fast switching and voltage control are retained, and QPL qualification ensures high reliability.

Producent:: Infineon
Rozmiar:: 1477 kB
Stron:: 9

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JANSR2N7261

JANSR2N7261 is a rad hard, 100V, 8A single N-channel MOSFET with QPL qualification and electrical performance up to 500krad(Si) TID. IR HiRel HEXFET technology provides high-performance power MOSFETs, with low RDS(on), low gate charge, and MOSFET advantages retained. Ideal for switching applications in space such as DC-DC converters and motor control.

Producent:: Infineon
Rozmiar:: 1270 kB
Stron:: 13

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JANSR2N7269

The N-channel MOSFET JANSR2N7269 is a single device with 200V and 26A capabilities, packaged in TO-254AA. It is radiation-hardened up to 100krad(Si) TID and QPL-qualified, featuring low RDS(on) and gate charge for reduced power losses in switching applications. MOSFET advantages such as voltage control, fast switching, and temperature stability are retained.

Producent:: Infineon
Rozmiar:: 1263 kB
Stron:: 13

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JANSR2N7648D5

JANSR2N7648D5 is a radiation-hardened R9 N-channel MOSFET with a 100V and 30A rating, designed for space applications. Its low RDS(on) and faster switching times increase power density and reduce power losses in high-speed switching applications in space bus and payload systems. The MOSFET advantages of voltage control, fast switching, ease of paralleling and temperature stability are retained.

Producent:: Infineon
Rozmiar:: 443 kB
Stron:: 9