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    S79FS01GSFABHB213

    * x8 interface * MIRRORBIT™ technology * Execute in Place (XiP) * Error Checking and Correction (ECC) * Advanced Sector Protection (ASP) * Twenty-year data retention * 100 k cycles endurance
    Producent:
    Infineon
    Rozmiar:
    1363 kB
    Stron:
    169
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    CYEL15B102Q-SXM

    Radiation tolerant, highly reliable, small footprint, 2Mb non-volatile Serial Peripheral Interface (SPI) F-RAM for New Space Our radiation tolerant, 2Mb, SPI Ferroelectric RAM (F-RAM) is one of the industry’s lowest power, non-volatile memory solutions that is guaranteed to 50 Krad (Si) TID and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for new space applications.
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    Infineon
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    713 kB
    Stron:
    35
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    CYRS15B102Q-GGMB

    Infineon offers the industry’s first radiation hardened, highly reliable, small footprint, 2 Mb non-volatile SPI Ferroelectric RAM (F-RAM) . Our rad hard SPI F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications.NOTE: This part is superseded by 5962R1821601VXC
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    Infineon
    Rozmiar:
    666 kB
    Stron:
    31
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    CYPT15B102N-GGMB

    Infineon’s radiation hardened 2 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments. Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications. For flight devices, order DLAM QML-V part 5962R2
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    Infineon
    Rozmiar:
    288 kB
    Stron:
    36
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    CYPT15B101N-GGMB

    Infineon’s radiation hardened 1 Mb non-volatile Ferroelectric RAM (F-RAM) memory offers the utmost reliability and performance for extreme environments. Our rad hard F-RAM is one of the industry’s lowest power, non-volatile memory solutions that is Single Event Upset (SEU) immune and virtually unlimited endurance. Infineon’s instant non-volatile write technology and greater than 100-year data retention provides the highest reliability for space applications. For flight devices, order DLAM QML-V part number
    Producent:
    Infineon
    Rozmiar:
    262 kB
    Stron:
    30
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    1586700-1

    Contact Retention Tool For MATE-N-LOK Fan Motor Connector 794099-1
    Producent:
    TE Connectivity
    Rozmiar:
    137 kB
    Stron:
    1