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    ISC300N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC300N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide a suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a wide range of applications: from static swiching to high frequency in hard and soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    1443 kB
    Stron:
    14
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    IPP175N20NM6

    OptiMOS™ 6 power MOSFET 200 V normal level in TO-220 package IPP175N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide unparallel efficiency and power density compared to legacy IR MOSFETTM products. The OptiMOS™ 6 200 V technology was designed to fullfill the requirements of a variety of applications: from static swiching to high frequency in hard and soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    894 kB
    Stron:
    12