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    IMT44R015M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 15 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
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    1476 kB
    Stron:
    18
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    IMT44R025M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 25 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1474 kB
    Stron:
    18
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    IMT44R011M2H

    CoolSiC™ MOSFET 440 V G2 in TOLL (PG-HSOF-8) package, 11 mΩ The CoolSiC™ MOSFET 440 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 440 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1471 kB
    Stron:
    18
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    IMW40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1349 kB
    Stron:
    17
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    IMW40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1345 kB
    Stron:
    17
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    IMW40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
    Stron:
    17
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    IMW40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
    Stron:
    17
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    IMW40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1341 kB
    Stron:
    17
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    IMLT40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1304 kB
    Stron:
    18
  10. Podgląd PDFa
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    IMLT40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1301 kB
    Stron:
    18
  11. Podgląd PDFa
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    IMLT40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
  12. Podgląd PDFa
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    IMLT40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1299 kB
    Stron:
    18
  13. Podgląd PDFa
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    IMLT40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1298 kB
    Stron:
    18
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    F3L420R12W3H7-H21

    1200 V, 420 A three-level NPC2 IGBT module EasyPACK™ 3B 1200 V, 420 A in 3-level NPC 2 topology featuring the latest 1200 V TRENCHSTOP™ IGBT H7, EC7, Rapid Diode. The module is equipped with High current PressFit Pin contact technology and NTC. It is a single module solution targeting 1000 Vdc 125 kW power conversion system design.
    Producent:
    Infineon
    Rozmiar:
    1295 kB
    Stron:
    21
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    ISC240P06LM

    P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFET 60 V, SuperSO8 package, targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Features easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in logic level with a wide RDS(on) range, improves efficiency
    Producent:
    Infineon
    Rozmiar:
    1244 kB
    Stron:
    11
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    ISC16DP15LM

    P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFET 150 V, SuperSO8 package, targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Features easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in logic level with a wide RDS(on) range, improves efficiency
    Producent:
    Infineon
    Rozmiar:
    1243 kB
    Stron:
    11
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    ISC750P10LM

    P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFET 100 V, SuperSO8 package, targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Features easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in logic level with a wide RDS(on) range, improves efficiency
    Producent:
    Infineon
    Rozmiar:
    1236 kB
    Stron:
    11
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    IMZA40R015M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17
  19. Podgląd PDFa
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    IMZA40R025M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    17
  20. Podgląd PDFa
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    IMZA40R011M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1224 kB
    Stron:
    17
  21. Podgląd PDFa
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    IMZA40R045M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    17
  22. Podgląd PDFa
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    IMZA40R036M2H

    CoolSiC™ MOSFET 400 V G2 in TO-247 4-pin package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    17
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    ISC800P06LM

    P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFET 60 V, SuperSO8 package, targeting battery management, load switch and reverse polarity protection applications, reducing design complexity in medium and low power applications. Features easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. Available in logic level with a wide RDS(on) range, improves efficiency
    Producent:
    Infineon
    Rozmiar:
    1218 kB
    Stron:
    11
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    ATmega88

    Atmel | SMART SAM DA1 Series Targeting Automotive Capacitive Buttons/Sliders/Wh
    Producent:
    Microchip
    Rozmiar:
    383 kB
    Stron:
    2
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    CYPD2803A1-09FNXIT

    CYPD2803A1-09FNXIT EZ-PD™ CMG2 is an Electronically Marked Cable Assembly controller targeting passive non-Thunderbolt and Thunderbolt USB-C cables
    Producent:
    Infineon
    Rozmiar:
    169 kB
    Stron:
    17