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IAUTN15S6N025T

150V, N-Ch, 2.5 mΩ max, Automotive MOSFET, TOLT (10x15), OptiMOS™ 6 IAUTN15S6N025T is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLT 10x15 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

Producent:: Infineon
Rozmiar:: 2372 kB
Stron:: 12

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IAUTN15S6N038T

150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLT (10x15), OptiMOS™ 6 IAUTN15S6N038T is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLT 10x15 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.

Producent:: Infineon
Rozmiar:: 2355 kB
Stron:: 12

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IMLT40R015M2H

CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 15 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Producent:: Infineon
Rozmiar:: 1304 kB
Stron:: 18

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IMLT40R025M2H

CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 25 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Producent:: Infineon
Rozmiar:: 1301 kB
Stron:: 18

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IMLT40R036M2H

CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 36 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Producent:: Infineon
Rozmiar:: 1299 kB
Stron:: 18

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IMLT40R045M2H

CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 45 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Producent:: Infineon
Rozmiar:: 1299 kB
Stron:: 18

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IMLT40R011M2H

CoolSiC™ MOSFET 400 V G2 in TOLT (PG-HDSOP-19) package, 11 mΩ The CoolSiC™ MOSFET 400 V G2 combines high robustness with ultra-low switching losses and on-state resistance while reducing overall system costs. Developed based on CoolSiC™ Generation 2 technology, this 400 V SiC MOSFET delivers outstanding power density and system efficiency in 2—and 3-level hard—and soft-switching topologies. Targeting power conversion in AI Server PSU, SMPS, motor control, renewables, energy storage, and Class-D amplifiers.

Producent:: Infineon
Rozmiar:: 1298 kB
Stron:: 18

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IGLT65R055B2

The IGLT65R055B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaN™ BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.

Producent:: Infineon
Rozmiar:: 1260 kB
Stron:: 18

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IPTC068N20NM6

OptiMOS™ 6 power MOSFET 200 V normal level in TOLT package IPTC068N20NM6 leverages the advanced cell design of the OptiMOS™ 6 200 V technology to provide suitable alternative to legacy OptiMOS™ 3 and OptiMOS™ FD products. OptiMOS™ 6 200 V was designed to fulfill the requirements of a wide range of applications: from static switching to high frequency in hard and soft switching applications. Highest power density can be achieved with the combination of the TOLT package and the OptiMOS™ 6 technology.

Producent:: Infineon
Rozmiar:: 1246 kB
Stron:: 15

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IGLT65R110B2

The IGLT65R110B2 is a 650 V normally-off bidirectional power transistor in TOLT package, enabling high power density designs. The CoolGaNTM BDS 650 V G5 enables efficient voltage blocking in both directions, making it a versatile option for a wide range of applications and enabling cost-attractive topologies.