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    MA5342MS

    MERUS™ 2-channel analog input class D audio multichip module optimized for high-impedance speakers The MA5342MS is optimized for 4-16 Ω speaker impedances. It offers the same or higher output power than monolithic alternatives without heatsink and 50% less footprint. This MCM solution integrates 2 channel PWM controller, high voltage gate driver, and 4 low RDS(ON) MOSFETs. It includes standard class D protection features for reliable operation over various environmental conditions. MA5342MS has the same 7x
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    Infineon
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    RZ/N2L

    Integrated TSN-Compliant 3-Port Gigabit Ethernet Switch Enables Various Industrial Applications to Easily Implement Industrial Ethernet and TSN
    Producent:
    Renesas Electronics
    Rozmiar:
    1658 kB
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    127
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    IGT65R035D2

    CoolGaN™ Transistor 650 V G5 The IGT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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    Infineon
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    1484 kB
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    18
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    IGT65R025D2

    CoolGaN™ Transistor 650 V G5 The IGOT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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    Infineon
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    1483 kB
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    18
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    IGT65R140D2

    CoolGaN™ Transistor 650 V G5 The IGT65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various consumer and industrial applications.
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    Infineon
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    1482 kB
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    18
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    IGT65R045D2

    CoolGaN™ Transistor 650 V G5 The IGT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
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    1481 kB
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    18
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    IGT65R055D2

    CoolGaN™ Transistor 650 V G5 The IGT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled TOLL package, it is designed for optimal power dissipation in various industrial applications.
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    Infineon
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    1480 kB
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    18
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    FS03MR12A7MA2B

    HybridPACK™ Drive G2 CoolSiC™: Compact 1200V/310A B6-bridge power module optimized for inverter various power classes The power module implements the second generation CoolSiC™ Automotive MOSFET 1200V, optimized for electric drive train applications, from mid- to high-range automotive power classes to high-range commercial, construction, and agricultural vehicles.
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    Infineon
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    1426 kB
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    19
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    IGLT65R035D2

    CoolGaN™ Transistor 650 V G5 The IGLT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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    Infineon
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    1346 kB
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    17
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    IGLT65R025D2

    CoolGaN™ Transistor 650 V G5 The IGLT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1346 kB
    Stron:
    17
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    IGLT65R110D2

    CoolGaN™ Transistor 650 V G5 The IGLT65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
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    Infineon
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    1346 kB
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    17
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    IGLT65R055D2

    CoolGaN™ Transistor 650 V G5 The IGLT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1346 kB
    Stron:
    17
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    IGLT65R045D2

    CoolGaN™ Transistor 650 V G5 The IGLT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1344 kB
    Stron:
    17
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    TLI55910-A6E-E0001

    XENSIV™ - TLI55910-A6E-E0001 high-sensitivity and low-power linear TMR position sensor for precise measurements The TLI55910 is a high-sensitivity and low-power linear position sensor that leverages tunnel magnetoresistance (TMR) technology to deliver precise linear measurements. This non-amplified analog sensor can measure magnetic fields with in a range of ±35 mT and boasts a large ratiometric output sensitivity of 5 mV/V/mT. This device is a versatile solution for various measurements such as displaceme
    Producent:
    Infineon
    Rozmiar:
    1241 kB
    Stron:
    14
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    IGLD65R080D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R080D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
    Producent:
    Infineon
    Rozmiar:
    1228 kB
    Stron:
    17
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    IGLD65R140D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R140D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
    Producent:
    Infineon
    Rozmiar:
    1227 kB
    Stron:
    17
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    IGLD65R110D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R110D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
    Producent:
    Infineon
    Rozmiar:
    1226 kB
    Stron:
    17
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    IGLD65R055D2

    CoolGaN™ Transistor 650 V G5 The IGLD65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled DFN package, it is designed for optimal power dissipation in various industrial and consumer applications.
    Producent:
    Infineon
    Rozmiar:
    1225 kB
    Stron:
    17
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    IGOT65R035D2

    CoolGaN™ Transistor 650 V G5 The IGOT65R035D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1147 kB
    Stron:
    15
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    IGOT65R025D2

    CoolGaN™ Transistor 650 V G5 The IGOT65R025D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1146 kB
    Stron:
    15
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    IGOT65R055D2

    CoolGaN™ Transistor 650 V G5 The IGOT65R055D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1145 kB
    Stron:
    15
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    IGOT65R045D2

    CoolGaN™ Transistor 650 V G5 The IGOT65R045D2 GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN™ 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.
    Producent:
    Infineon
    Rozmiar:
    1144 kB
    Stron:
    15
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    FS01MR08A8MA2C

    This HybridPACK™ Drive G2 CoolSiC™ G2 module is a highly compact B6-bridge power module (750V/620A) with enhanced package optimized for various inverter power classes. This HybridPACK™ Drive G2 CoolSiC™ G2 module is a highly compact B6-bridge power module (750V/620A) with enhanced package optimized for various inverter power classes.
    Producent:
    Infineon
    Rozmiar:
    1125 kB
    Stron:
    19
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    KP497

    A modern battery electric vehicle is constantly monitored by sensors to detect thermal runaway events. KP497 is the advanced pressure sensor for battery management systems with further integrated features. Besides the key-function to warn in case of a thermal runaway event with highest efficiency, the KP497 provides a flexible system to support various Autonomous Low Power Monitoring (LPM) Modes + in-field programmability, an integrated 1-axis accelerations sensor for battery shock monitoring as part of ec
    Producent:
    Infineon
    Rozmiar:
    948 kB
    Stron:
    38
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    IRL520N

    100V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
    Producent:
    Infineon
    Rozmiar:
    317 kB
    Stron:
    10