MBRS3100T3G Schottky barrier rectifier, 100V, 3.0 A, DO-214AB/SMC

Schottky barrier rectifier, 40V, 5.0 A, DO-214AB/SMC

Description: The MBRS3100T3G employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.

Features: - Small Compact Surface Mountable Package with J-Bend Leads - Rectangular Package for Automated Handling - Highly Stable Oxide Passivated Junction - Excellent Ability to Withstand Reverse Avalanche Energy Transients - Guard-Ring for Stress Protection - NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable - PB-Free

Mechanical Characteristics - Case: Epoxy, Molded, Epoxy Meets UL 94 V-0 - Weight: 217 mg (Approximately) - Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable - Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds - Polarity: Notch in Plastic Body Indicates Cathode Lead - ESD Rating:

- Machine Model, C (> 400 V)

- Human Body Model, 3B (> 8000 V)