IRF9Z24NPBF MOSFET, P-CH, 55V 12A 45W, TO-220AB

Description Fifth generation HEXFETs from international rectifierr utilize advanced processing techniques to achieve the lowest possible on-resistance per cilicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an estremely efficient device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features - logic-level gate drive - advanced process technology - dynamic dv/dt rating - 175°C operating temperature - fully avalanche rated - fast switching