High Isolation, Silicon SPDT, Nonreflective Switch, 0.1 GHz to 6.0 GHz

The HMC8038 is a high isolation, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for cellular infrastructure applications, yielding up to 62 dB of isolation up to 4.0 GHz, a low 0.8 dB of insertion loss up to 4.0 GHz, and 60 dBm of input third-order intercept. Power handling is excellent up to 6.0 GHz, and it offers an input power for an 0.1 dB compression point (P0.1dB) of 35 dBm (VDD = 5 V). On-chip circuitry operates a single, positive supply voltage from 3.3 V to 5 V, as well as a single, positive voltage control from 0 V to 1.8 V/3.3 V/5.0 V at very low dc currents. An enable input (EN) set to logic high places the switch in an all off state, in which RFC is reflective.

The HMC8038 has ESD protection on all device pins, including the RF interface, and can stand 4 kV HMB and 1.25 kV CDM. The HMC8038 offers very fast switching and RF settling times of 150 ns and 170 ns, respectively. The device comes in a RoHS-compliant, compact 4 mm × 4 mm LFCSP package.

Applications

* Cellular/4G infrastructure

* Wireless infrastructure

* Automotive telematics

* Mobile radios

* Test equipment

* Nonreflective, 50 Ω design

* High isolation: 60 dB typical

* Low insertion loss: 0.8 dB typical

* High power handling

34 dBm through path

29 dBm terminated path

* High linearity

0.1 dB compression (P0.1dB): 35 dBm typical

Input third-order intercept (IP3): 60 dBm typical

* ESD ratings

4 kV human body model (HBM), Class 3A

1.25 kV charged device model (CDM)

* Single positive supply

3.3 V to 5 V

1.8 V-compatible control

* see data sheet for additional features