STPSC16H065AW 650 V, 16 A Single High Surge Silicon Carbide Power Schottky Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC16H065AW
- Producent:
- STMicroelectronics
- Obudowa:
- TO-247
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +26% (07.07.2025)
- Poprzednia cena:
- 4.57 USD
| Ilość [ x szt]: | 10+ | 100+ |
|---|---|---|
| Cena USD [za szt]: | 3.86 | 3.04 |
Sugerowane produkty dla stpsc16h065
The STPSC16H065A SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode, packaged in TO-247, will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics