STPSC20H12GY-TR Automotive 1200 V, 20 A Silicon Carbide Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC20H12GY-TR
- Producent:
- STMicroelectronics
- Obudowa:
- TO-263
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +0.28% (02.11.2025)
- Poprzednia cena:
- 10.56 USD
| Ilość [ x szt]: | 10+ | 100+ |
|---|---|---|
| Cena USD [za szt]: | 7.35 | 6.15 |
Sugerowane produkty dla stpsc20h12
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics