GaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz

The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment.

Applications

* Telecom infrastructure

* Microwave radio

* Very small aperture terminal (VSAT)

* Military and space

* Test instrumentation

* Fiber optics

* P1dB output power: 29 dBm

* Gain: 13 dB

* Output IP3: 44 dBm

* 50 Ω matched input/output

* 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2

* 1 assembly/test site

* 1 fabrication site