10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier

The HMC8500PM5E is a gallium nitride (GaN), broadband power amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneous bandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.

The HMC8500PM5E is ideal for pulsed or continuous wave (CW) applications, such as wireless infrastructure, radars, public mobile radios, and general-purpose amplification.

The HMC8500PM5E amplifier is externally tuned using low cost, surface-mount components and is available in a compact LFCSP package.

Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevant

APPLICATIONS

* Extended battery operation for public mobile radios

* Power amplifier stage for wireless infrastructures

* Test and measurement equipment

* Commercial and military radars

* General-purpose transmitter amplification

* High small signal gain: 15.0 dB typical

* POUT: 40 dBm typical at PIN = 30 dBm

* High PAE: 55% typical at PIN = 30 dBm

* Frequency range: 0.01 GHz to 2.8 GHz across all frequencies