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STPSC12065DY Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode

STMicroelectronics

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MPN:
STPSC12065DY
Producent:
STMicroelectronics
Obudowa:
TO-220AC
Dodany do bazy:
Ostatnio widziany:
Zmiana ceny:
-0.57% (05.10.2025)
Poprzednia cena:
3.52
Ilość [ x szt]: 10+
Cena USD [za szt]: 2.09

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

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