STPSC12C065DY Automotive 650 V, 12 A SiC Power Schottky Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC12C065DY
- Producent:
- STMicroelectronics
- Obudowa:
- TO-220AC
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +0.74% (07.07.2025)
- Poprzednia cena:
- 2.71 USD
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 1.87 | 1.72 | 1.67 |
Sugerowane produkty dla stpsc12c065
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.
Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics