STPSC20065GY-TR Automotive 650 V, 20 A SiC Power Schottky Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC20065GY-TR
- Producent:
- STMicroelectronics
- Obudowa:
- TO-263
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +0.48% (23.10.2025)
- Poprzednia cena:
- 6.31 USD
| Ilość [ x szt]: | 10+ | 100+ |
|---|---|---|
| Cena USD [za szt]: | 4.34 | 3.29 |
Sugerowane produkty dla stpsc20065
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics