STPSC20H12G2Y-TR Automotive 1200 V, 20 A Silicon Carbide Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC20H12G2Y-TR
- Producent:
- STMicroelectronics
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- -9% (07.07.2025)
- Poprzednia cena:
- 10.68 USD
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 6.66 | 5.45 | 5.44 |
Sugerowane produkty dla stpsc20h12
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics