GaAs, HBT, MMIC, Low Phase Noise Amplifier, 6 GHz to 14 GHz

The ADL8150 is a self biased gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), heterojunction bipolar transistor (HBT), low phase noise amplifier that operates from 6 GHz to 14 GHz. The amplifier provides 12 dB of typical signal gain, 18 dBm output power at 1 dB gain compression (OP1dB), and a typical output third-order intercept (OIP3) of 30 dBm. The amplifier requires 74 mA from a 5 V collector supply voltage.

The ADL8150 also features inputs and outputs (I/Os) that are internally matched to 50 Ω, and facilitates integration into multichip modules (MCMs). Note that throughout the data sheet, multifunction pins, such as RFOUT/VCC, are referred to either by the entire pin name or by a single function of the pin, for example, RFOUT, when only that function is relevant.

Applications

* Military and space

* Test instrumentation

* Communications

* OP1dB: 18 dBm (typical at 7 GHz to 12 GHz)

* PSAT: 22 dBm (typical at 7 GHz to 12 GHz)

* Gain: 12 dB (typical at 7 GHz to 12 GHz)

* OIP3: 30 dBm typical