STGF20H65DFB2 Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a TO-220FP package
STMicroelectronics
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- Sklep zagraniczny
- MPN:
- STGF20H65DFB2
- Producent:
- STMicroelectronics
- Obudowa:
- TO-220FP
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +14% (05.07.2025)
- Poprzednia cena:
- 2.06 USD
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 1.16 | 1.04 | 0.83 |
Sugerowane produkty dla stgf20h65dfb2
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
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Produkt pochodzi z oferty sklepu STMicroelectronics