STPSC10H12B2-TR 1200V, 10A, silicon carbide power Schottky Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC10H12B2-TR
- Producent:
- STMicroelectronics
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- -0.82% (10.07.2025)
- Poprzednia cena:
- 4.85 USD
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 3.20 | 2.27 | 2.15 |
Sugerowane produkty dla stpsc10h12b2
This 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature
Housed in DPAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, servers, DC/DC modules, easing the compliance to IEC-60664-1.
The STPSC10H12B2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics