STPSC10H12G2-TR 1200V, 10A, silicon carbide power Schottky Diode
STMicroelectronics
- Sklep zagraniczny
- MPN:
- STPSC10H12G2-TR
- Producent:
- STMicroelectronics
- Waluta:
- dolar amerykański
- Dodany do bazy:
- Ostatnio widziany:
- Zmiana ceny:
- +13% (16.08.2025)
- Poprzednia cena:
- 4.32 USD
| Ilość [ x szt]: | 10+ | 100+ | 500+ |
|---|---|---|---|
| Cena USD [za szt]: | 3.23 | 2.30 | 2.19 |
Sugerowane produkty dla stpsc10h12g2
This 10 A, 1200 V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.
The STPSC10H12G2-TR will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu STMicroelectronics