High Power, 20 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 5.0 GHz

The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations. The ADRF5132 has high power handling of 35 dBm LTE (average typical at 105°C), a low insertion loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm (typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.

The on-chip circuitry operates at a single, positive supply voltage of 5 V and a typical supply current of 1.1 mA typical, making the ADRF5132 an ideal alternative to pin diode-based switches.

The device is in a RoHS compliant, compact, 16-lead, 3 mm × 3 mm LFCSP package.

Applications

* Cellular/4G infrastructure

* Wireless infrastructure

* Military and high reliability applications

* Test equipment

* Pin diode replacement

* Reflective, 50 Ω design

* Low insertion loss: 0.6 dB typical at 2.7 GHz

* High power handling at TCASE = 105°C

* Long-term (>10 years operation)

* Peak power: 43 dBm

* CW power: 38 dBm

* LTE power average (8 dB PAR): 35 dBm

* Single event (<10 sec operation)

* LTE power average (8 dB PAR): 41 dBm