High Power, 88 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 4.0 GHz

The ADRF5160 is a silicon-based, high power, 0.7 GHz to 4.0 GHz, silicon, single-pole, double-throw (SPDT) reflective switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, such as long-term evolution (LTE) base stations. The ADRF5160 has high power handling of 41 dBm (8 dB PAR LTE, long-term (>10 years) average typical), a low insertion loss of 0.7 dB typical to 2.0 GHz, an input third-order intercept (IP3) of 70 dBm (typical), and a 0.1 dB compression point (P0.1dB) of 47 dBm. On-chip circuitry operates at a single positive supply voltage of 5 V at a typical supply current of 1.1 mA, making the ADRF5160 an ideal alternative to pin diode-based switches.

The ADRF5160 comes in a RoHS compliant, compact 32-lead, 5 mm × 5 mm LFCSP.

Applications

* Wireless infrastructure

* Military and high reliability applications

* Test equipment

* Pin diode replacement

* Reflective, 50 Ω design

* Low insertion loss: 0.7 dB typical to 2.0 GHz

* High power handling at TCASE = 105°C

* Long term (>10 years) average

* CW power: 43 dBm

* Peak power: 49 dBm

* LTE average power (8 dB PAR): 41 dBm

* Single event (<10 sec) average

* LTE average power (8 dB PAR): 44 dBm

* High linearity

* P0.1dB: 47 dBm typical

* IP3: 70 dBm typical

* ESD ratings

* HBM: 4 kV, (Class 3A)

* CDM: 1.25 kV

* Single positive supply: 5 V

* Positive control, CMOS/TTL compatible

* 32-lead, 5 mm × 5 mm LFCSP package